A 1.0 V, 10–22 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-Chip, Low-Power, Remote Sensing Applications

A 1 V supply voltage, 10-22 GHz wideband low-power low noise amplifier (LNA) is implemented in a 0.13 μm SiGe BiCMOS technology, targeting portable single-chip remote sensing radar application. This LNA exhibits a measured gain of 15.5 dB at 16 GHz and a -3 dB bandwidth of 12 GHz, while dissipating only 4 mA from a 1 V supply, with intentionally biasing the HBTs in weak saturation. The LNA has a measured noise figure (NF) of 3.4 dB at 16 GHz and less than 4.4 dB across the operating bandwidth of 10 to 22 GHz. In addition, the LNA design offers a reduced bandwidth operational mode of 10-16 GHz for interference reduction, bringing the power consumption further down to only 3 mW.