DocumentCode :
68528
Title :
Reply: comment on ´is memristor a dynamic element?´
Author :
Bo-Cheng Bao
Author_Institution :
Sch. of Inf. Sci. & Eng., Changzhou Univ., Changzhou, China
Volume :
50
Issue :
19
fYear :
2014
fDate :
September 11 2014
Firstpage :
1344
Lastpage :
1345
Abstract :
The Comment of Riaza is acknowledged. In response, it is argued that by establishing the complete corresponding relations between the voltage-current relation and the constitutive relation of memristors, the conclusions in the original Letter are appropriate. It is further illustrated that if the voltage-current model is used, the memristor is regarded as a dynamic element, whereas if the flux-charge model is utilised, the memristor is treated as a non-dynamic element. The results indicate that the memristor initial conditions described by the constitutive relation should be assigned in the modelling of memristive circuits, and the dynamic nature of memristors is related with the memristive circuit model.
Keywords :
memristors; constitutive relation; dynamic element; flux-charge model; memristive circuit model; nondynamic element; voltage-current relation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.1963
Filename :
6898638
Link To Document :
بازگشت