DocumentCode
68528
Title
Reply: comment on ´is memristor a dynamic element?´
Author
Bo-Cheng Bao
Author_Institution
Sch. of Inf. Sci. & Eng., Changzhou Univ., Changzhou, China
Volume
50
Issue
19
fYear
2014
fDate
September 11 2014
Firstpage
1344
Lastpage
1345
Abstract
The Comment of Riaza is acknowledged. In response, it is argued that by establishing the complete corresponding relations between the voltage-current relation and the constitutive relation of memristors, the conclusions in the original Letter are appropriate. It is further illustrated that if the voltage-current model is used, the memristor is regarded as a dynamic element, whereas if the flux-charge model is utilised, the memristor is treated as a non-dynamic element. The results indicate that the memristor initial conditions described by the constitutive relation should be assigned in the modelling of memristive circuits, and the dynamic nature of memristors is related with the memristive circuit model.
Keywords
memristors; constitutive relation; dynamic element; flux-charge model; memristive circuit model; nondynamic element; voltage-current relation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.1963
Filename
6898638
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