• DocumentCode
    68528
  • Title

    Reply: comment on ´is memristor a dynamic element?´

  • Author

    Bo-Cheng Bao

  • Author_Institution
    Sch. of Inf. Sci. & Eng., Changzhou Univ., Changzhou, China
  • Volume
    50
  • Issue
    19
  • fYear
    2014
  • fDate
    September 11 2014
  • Firstpage
    1344
  • Lastpage
    1345
  • Abstract
    The Comment of Riaza is acknowledged. In response, it is argued that by establishing the complete corresponding relations between the voltage-current relation and the constitutive relation of memristors, the conclusions in the original Letter are appropriate. It is further illustrated that if the voltage-current model is used, the memristor is regarded as a dynamic element, whereas if the flux-charge model is utilised, the memristor is treated as a non-dynamic element. The results indicate that the memristor initial conditions described by the constitutive relation should be assigned in the modelling of memristive circuits, and the dynamic nature of memristors is related with the memristive circuit model.
  • Keywords
    memristors; constitutive relation; dynamic element; flux-charge model; memristive circuit model; nondynamic element; voltage-current relation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.1963
  • Filename
    6898638