Polycrystalline Silicon Nanowires Synthesis Compatible With CMOS Technology for Integrated Gas Sensing Applications

Polysilicon nanowires are synthesized following a classical top-down approach using conventional UV lithography technique fully compatible with the existing silicon complementary metal-oxide-semiconductor technology. N- and P-type in situ doping of these nanowires is controlled over a large range of doping levels and the electrical properties of these nanowires are analyzed. The results show that resistivity dependence with the doping level is both related to the nanowire size-dependent structural quality and doping specie. Charged gas species (ammonia) sensitivity of these nanowires has also been studied. In addition, the feasibility of N- and P-channel polysilicon nanowire transistors is demonstrated.