A novel 4H-SiC VDMOS utilizing fully depleted p-body structure

A novel n-channel VDMOS fabricated on 4H-SiC is reported. This device is a distinct double-layer structure with an ultra-thin n-doped region under a fully depleted p-body region in the channel region which induces a larger amount of carriers when the gate bias exceeds the threshold voltage, with little leakage current in off-state. As a result, the specific on-resistance of the VDMOS is 6.21 mΩ·cm², which is obviously reduced comparing with a conventional structure as good as the blocking voltage of nearly 1000V.