Title :
Extraction of a Model for a Microwave Power pHEMT
Author :
Ross, Tyler N. ; Cormier, Gabriel ; Wight, Jim S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
This article presents the development of a large-signal transistor model for a power microwave pseudomorphic high-electron mobility transistor (pHEMT). This model won the first prize in the Microwave Transistor Modeling student competition held during the 2013 IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS2013) in Seattle, Washington.
Keywords :
microwave field effect transistors; power HEMT; semiconductor device models; 2013 IEEE Microwave Theory and Techniques Society; IMS2013; International Microwave Symposium; MTT-S; Microwave Transistor Modeling; Seattle Washington; large-signal transistor model; microwave power pHEMT; power microwave pseudomorphic high-electron mobility transistor; Capacitance; Integrated circuit modeling; Logic gates; Mathematical model; Microwave circuits; PHEMTs; Temperature measurement; Transistors;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2013.2288833
