Title :
Three-Terminal Nonvolatile Resistive-Change Device Integrated in Cu-BEOL
Author :
Tada, Mitsunori ; Okamoto, K. ; Banno, N. ; Sakamoto, Takanori ; Hada, Hiromitsu
Author_Institution :
Low-Power Electron. Assoc. & Project, Tsukuba, Japan
Abstract :
A diode-inserted complementary atom switch with two resistive-change junctions coupled with the diode-inserted gate is proposed. The atom switch serves the nonvolatile resistive-change junction, where the two atom switches are connected in series with opposite direction and transfer or cutoff the signals. The gate is placed between them through the diode, where back-end-of-the-line- Ta2O5-x diode is directly stacked on the two of atom switches, achieving high rectifying separation of the gate. The developed device realizes the three-terminal operation and potentially enables to replace the CMOS routing switch composed of SRAM and transmission gate with nonvolatility.
Keywords :
copper; random-access storage; semiconductor diodes; tantalum compounds; BEOL; Cu; Ta2O5-x; atom switch; back-end-of-the-line diode; diode-inserted gate; resistive-change junctions; three-terminal nonvolatile resistive-change device; CMOS integrated circuits; Junctions; Logic gates; Nonvolatile memory; Programming; Switches; Switching circuits; Atom switch; field-programmable gate array (FPGA); nonvolatile; reconfigurable logic; solid-electrolyte; three-terminal device;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2296036
