Three-Terminal Nonvolatile Resistive-Change Device Integrated in Cu-BEOL

Author

Tada, Mitsunori ; Okamoto, K. ; Banno, N. ; Sakamoto, Takanori ; Hada, Hiromitsu

Author_Institution

Low-Power Electron. Assoc. & Project, Tsukuba, Japan

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

505

Lastpage

510

Abstract

A diode-inserted complementary atom switch with two resistive-change junctions coupled with the diode-inserted gate is proposed. The atom switch serves the nonvolatile resistive-change junction, where the two atom switches are connected in series with opposite direction and transfer or cutoff the signals. The gate is placed between them through the diode, where back-end-of-the-line- Ta₂O_5-x diode is directly stacked on the two of atom switches, achieving high rectifying separation of the gate. The developed device realizes the three-terminal operation and potentially enables to replace the CMOS routing switch composed of SRAM and transmission gate with nonvolatility.

Keywords

copper; random-access storage; semiconductor diodes; tantalum compounds; BEOL; Cu; Ta₂O_5-x; atom switch; back-end-of-the-line diode; diode-inserted gate; resistive-change junctions; three-terminal nonvolatile resistive-change device; CMOS integrated circuits; Junctions; Logic gates; Nonvolatile memory; Programming; Switches; Switching circuits; Atom switch; field-programmable gate array (FPGA); nonvolatile; reconfigurable logic; solid-electrolyte; three-terminal device;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2296036

Filename

6717067