First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications

Author

Meneghesso, Gaudenzio ; Meneghini, Matteo ; Medjdoub, F. ; Tagro, Y. ; Grimbert, Bertrand ; Ducatteau, Damien ; Rolland, Nathalie ; Silvestri, Riccardo ; Zanoni, Enrico

Author_Institution

Dipt. di Ing. dell´Inf., Univ. di Padova, Padua, Italy

Volume

13

Issue

4

fYear

2013

fDate

Dec. 2013

Firstpage

480

Lastpage

488

Abstract

In this paper, an emerging double-heterostructure high-electron mobility transistor based on AlN/GaN/AlGaN grown on silicon substrate is presented, which enables a unique simultaneous achievement of high breakdown voltage and high frequency performance. This configuration system allowed state-of-the-art GaN-on-silicon dc, RF output power, and noise performances at 40 GHz, paving the way for high-performance millimeter-wave (mmW) cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave amplifiers; millimetre wave transistors; semiconductor device reliability; silicon; wide band gap semiconductors; AlN-GaN-AlGaN; Ka-band applications; RF output power; double-heterostructure high-electron mobility transistor; frequency 40 GHz; high-performance millimeter-wave amplifiers; mmW GaN-on-Si device stability; mmW cost-effective amplifiers; noise performances; reliability demonstration; silicon substrate; DH-HEMTs; Gallium nitride; III-V semiconductor materials; Logic gates; MODFETs; Performance evaluation; High electron mobility transistors; degradation; high frequency; reliability;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2013.2276425

Filename

6574234