Title :
Side-poly technique for enhanced breakdown voltage of Trench-NPT-IGBT
Author :
Lingfeng Jiang ; You Zhou ; Dan Zhang ; Shan He ; Xiaochao Li ; Donghui Guo
Author_Institution :
Dept. of Electron. Eng., Xiamen Univ., Xiamen, China
Abstract :
In this paper, a brand-new Side-poly electrode is introduced to improve the peak electric field of the conventional Trench-NPT-IGBT. By providing an additional electric field opposite to the original one, the proposed structure is able to counteract the electric field concentration under the bottom of the trench, and therefore increases the breakdown voltage and reduces the threshold voltage at the same time. Meanwhile, the simulation results have shown that the new IGBT device mentioned above has a breakdown voltage increased by 90 Volts and a threshold voltage reduced by 0.63 Volts compared to the conventional Trench-NPT-IGBT.
Keywords :
electric fields; electronic engineering computing; insulated gate bipolar transistors; semiconductor device models; IGBT device; breakdown voltage; electric field concentration; nonpunch-through IGBT; peak electric field; side-poly technique; threshold voltage; trench-NPT-IGBT; Electric fields; Electric potential; Electrodes; Insulated gate bipolar transistors; Junctions; Logic gates; Threshold voltage; Insulated Gate Bipolar Transistor (IGBT); Non-Punch-Through (NPT); Reversed Electricfield; Side-poly Bias; Trench Gate;
Conference_Titel :
Anti-Counterfeiting, Security and Identification (ASID), 2013 IEEE International Conference on
Conference_Location :
Shanghai
DOI :
10.1109/ICASID.2013.6825292
