Side-poly technique for enhanced breakdown voltage of Trench-NPT-IGBT

Author

Lingfeng Jiang ; You Zhou ; Dan Zhang ; Shan He ; Xiaochao Li ; Donghui Guo

Author_Institution

Dept. of Electron. Eng., Xiamen Univ., Xiamen, China

fYear

2013

fDate

25-27 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, a brand-new Side-poly electrode is introduced to improve the peak electric field of the conventional Trench-NPT-IGBT. By providing an additional electric field opposite to the original one, the proposed structure is able to counteract the electric field concentration under the bottom of the trench, and therefore increases the breakdown voltage and reduces the threshold voltage at the same time. Meanwhile, the simulation results have shown that the new IGBT device mentioned above has a breakdown voltage increased by 90 Volts and a threshold voltage reduced by 0.63 Volts compared to the conventional Trench-NPT-IGBT.

Keywords

electric fields; electronic engineering computing; insulated gate bipolar transistors; semiconductor device models; IGBT device; breakdown voltage; electric field concentration; nonpunch-through IGBT; peak electric field; side-poly technique; threshold voltage; trench-NPT-IGBT; Electric fields; Electric potential; Electrodes; Insulated gate bipolar transistors; Junctions; Logic gates; Threshold voltage; Insulated Gate Bipolar Transistor (IGBT); Non-Punch-Through (NPT); Reversed Electricfield; Side-poly Bias; Trench Gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Anti-Counterfeiting, Security and Identification (ASID), 2013 IEEE International Conference on

Conference_Location

Shanghai

Type

conf

DOI

10.1109/ICASID.2013.6825292

Filename

6825292