DocumentCode
68640
Title
Enhanced electroluminescence of all-inorganic colloidal quantum dot light-emitting diode by optimising the MoO3 intermediate layer
Author
Liyuan Tang ; Junliang Zhao ; Xiaoli Zhang ; Haitao Dai ; Xiaowei Sun
Author_Institution
Tianjin Key Lab. of Low Dimensional Mater. Phys. & Preparing Technol., Tianjin Univ., Tianjin, China
Volume
9
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
421
Lastpage
424
Abstract
The effects of the molybdenum trioxide (MoO3) intermediate layer on the performance of all-inorganic colloidal quantum dot light-emitting diodes (QD-LEDs) with a structure of ITO/MoO3/NiO/QDs/ZnO/Al are explored. MoO3 layers with different thickness were inserted between the indium tin oxide and nickel oxide layer via a thermal evaporation process. The presented results show that an ultrathin ( ~ 5 nm) MoO3 intermediate layer significantly enhanced the electroluminescence (EL) intensity of the QD-LED, which was more than 100 times higher than the device without the MoO3 layer. It is suggested that the EL enhancement originates from the effectively facilitated injection of holes into quantum dots through the MoO3 intermediate layer.
Keywords
II-VI semiconductors; aluminium; colloids; electroluminescence; indium compounds; light emitting diodes; molybdenum compounds; nickel compounds; quantum dots; tin compounds; wide band gap semiconductors; zinc compounds; ITO-MoO3-NiO; ZnO-Al; all-inorganic colloidal quantum dot light-emitting diode performance; electroluminescence intensity; hole injection; indium tin oxide layer; molybdenum trioxide intermediate layer effects; nickel oxide layer; thermal evaporation process; ultrathin intermediate layer;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2014.0079
Filename
6843045
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