Damage effect of typical electronic device under EMP

In the high technology condition, the weapon safety and survive capability is severely threatened by the complicated and changeable electromagnetic environment, especially for the electromagnetic field produced by HPM and ESD high rise current pulse. Electronic devices are gradually sensitive to the high electromagnetic pulse as the reducing characteristic size, increasing integrated degree, reducing power consumption, increasing working band and so on. It´s significant to study the damage and failure mechanism of electronic devices under high power electromagnetic field (HPEM) either for the civilian use or for the military application. The damage effect of typical electronic devices including diode, transistor, and digital integrated circuits under lightning surge pulse and nano-second square pulse is studied in this article. The damage law of various electronic devices under different pulse width is obtained, and the damage and failure mechanism of each device under different pulse power is analyzed, and some defending suggestion is proposed in the end of the article.