Title :
Dual-Band GaN MMIC Power Amplifier for Microwave Backhaul Applications
Author :
Quaglia, R. ; Camarchia, Vittorio ; Pirola, Marco
Author_Institution :
Dept. of Electron. & Telecommun., Politec. di Torino, Turin, Italy
Abstract :
Design and characterization of a dual-band (7 GHz and 15 GHz) MMIC GaN linear Power Amplifier are presented. The amplifier, suitable for point-to-point microwave backhaul applications, exploits a TriQuint GaN foundry process. Large signal measurements exhibit power gain higher than 10 dB and 7 dB in the lower and higher bands respectively, and saturated output power of 34.7 dBm, in a 15% band around the two center frequencies.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; GaN; TriQuint GaN foundry process; dual-band MMIC linear power amplifier; frequency 15 GHz; frequency 7 GHz; large signal measurements; point-to-point microwave backhaul applications; Dual band; Frequency measurement; Gain; Gallium nitride; MMICs; Microwave circuits; Power generation; Backhaul networks; Gallium Nitride (GaN); dual-band; monolithic microwave integrated circuit (MMIC);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2313587
