Title :
Thermal Rectifier Based on p-n Junction
Author :
Kislitsyn, Viktor ; Pavliuk, Sergiy ; Soltys, Roman ; Lozovski, Valeri ; Strilchuk, Galyna
Author_Institution :
Paton Electr. Welding Inst., Kiev, Ukraine
Abstract :
We propose a novel thermal rectifier based on p-n junction. The thermal rectification effect in the Si p-n junction system was demonstrated experimentally and explained theoretically. It was shown that heat flow from n- to p-type domain is greater than that from p-type to n-type domain. The thermal rectification factor obtained experimentally (evaluated theoretically) was 1.3 (~ 1.43).
Keywords :
elemental semiconductors; p-n junctions; rectification; silicon; Si; p-n junction system; semiconductor junctions; thermal rectification effect; thermal rectifier; Conductivity; Heating; Lattices; P-n junctions; Semiconductor diodes; Silicon; Thermal conductivity; Semiconductor devices; semiconductor junctions; silicon; thermal rectifier;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2296041
