DocumentCode :
687100
Title :
Total ionization damage effects in double silicon-on-Insulator devices
Author :
Honda, Shogo ; Hara, Kentaro ; Asano, Masahiro ; Maeda, T. ; Tobita, N. ; Arai, Yutaro ; Miyoshi, Takanori ; Ohno, M. ; Hatsui, Takaki ; Tsuru, T. ; Miura, Naruhisa ; Kasai, Hiroyuki ; Okihara, Masao
Author_Institution :
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
fYear :
2013
fDate :
Oct. 27 2013-Nov. 2 2013
Firstpage :
1
Lastpage :
7
Abstract :
We are developing monolithic pixel sensors based on a 0.2 μm fully-depleted silicon-on-Insulator (SOI) technology. The major issue in applications them in high-radiation environments is the total ionization damage (TID) effects. The effects are rather substantial in the SOI devices since the transistors are enclosed in the oxide layers where generated holes are trapped and affect the operation of the near-by transistors. The double SOI sensors that provide an independent electrode underneath the buried oxide layer have been developed. We have irradiated transistor test elements and pixel sensors with γ-rays. By adjusting the potential of this electrode, the TID effects are shown to be compensated. The pixel sensor irradiated to 20 kGy recovered its functionality by applying a bias to the electrode. The radiation tolerance of the SOI devices has been substantially improved by the double SOI.
Keywords :
MOSFET; electric sensing devices; electrochemical electrodes; gamma-ray effects; hole traps; ionisation; silicon-on-insulator; γ-rays; SOI technology; Si; buried oxide layer; double SOI sensors; double silicon-on-insulator devices; fully-depleted silicon-on-insulator; generated holes trapping; high-radiation environments; independent electrode; irradiated transistor test elements; monolithic pixel sensors; near-by transistors; radiation tolerance; size 0.2 mum; total ionization damage effects; Electrodes; MOS devices; Radiation effects; Silicon; Threshold voltage; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
Type :
conf
DOI :
10.1109/NSSMIC.2013.6829541
Filename :
6829541
Link To Document :
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