Title :
A modified a 3-Tr CMOS X-ray image sensor for low-distortion pixel output in source follower
Author :
Daehee Lee ; Kang, D.-U. ; Cho, Moonju ; Kim, Marn-Go ; Yoo, Hyoungsuk ; Park, Ki-Hong ; Kim, Heonhwan ; Kim, Jung-Ho ; Kim, Youngjae ; Cho, Guangsup
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
This paper presents a low distortion source follower (LDSF) method in 3-Tr (Transistor) CMOS X-ray sensor. Most of the important parameters in source follower is a gate to source voltage (Vgs) difference. This additional circuit reduces fill factor of the photodiode from 86% to 78% in the 50 μm × 50 μm size. This circuit requires only a 1 P-mos and 1 N-mos. Simulation test represented that the LDSF method makes Vgs more constant. It means that Vgs is not easily affected by Vds.
Keywords :
CMOS image sensors; MOSFET; X-ray detection; X-ray imaging; integrated circuit testing; photodetectors; photodiodes; LDSF method; N-MOS; P-MOS; fill factor reduction; gate to source voltage difference; low distortion source follower method; low-distortion pixel output; modified 3-Tr CMOS X-ray image sensor; photodiode; transistor; Biomedical imaging; CMOS integrated circuits; Field programmable gate arrays; Logic gates; Photodiodes; Photonics; X-ray imaging;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829605
