A modified a 3-Tr CMOS X-ray image sensor for low-distortion pixel output in source follower

Author

Daehee Lee ; Kang, D.-U. ; Cho, Moonju ; Kim, Marn-Go ; Yoo, Hyoungsuk ; Park, Ki-Hong ; Kim, Heonhwan ; Kim, Jung-Ho ; Kim, Youngjae ; Cho, Guangsup

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a low distortion source follower (LDSF) method in 3-Tr (Transistor) CMOS X-ray sensor. Most of the important parameters in source follower is a gate to source voltage (V_gs) difference. This additional circuit reduces fill factor of the photodiode from 86% to 78% in the 50 μm × 50 μm size. This circuit requires only a 1 P-mos and 1 N-mos. Simulation test represented that the LDSF method makes V_gs more constant. It means that V_gs is not easily affected by V_ds.

Keywords

CMOS image sensors; MOSFET; X-ray detection; X-ray imaging; integrated circuit testing; photodetectors; photodiodes; LDSF method; N-MOS; P-MOS; fill factor reduction; gate to source voltage difference; low distortion source follower method; low-distortion pixel output; modified 3-Tr CMOS X-ray image sensor; photodiode; transistor; Biomedical imaging; CMOS integrated circuits; Field programmable gate arrays; Logic gates; Photodiodes; Photonics; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829605

Filename

6829605