Title :
Study on the fast signal transfer for large-area X-ray image sensors
Author :
MyungSoo Kim ; Dong-uk Kang ; Dae Hee Lee ; Chankyu Kim ; Hyunjun Yoo ; Yewon Kim ; Jongyul Kim ; Minsik Cho ; Hyoungtaek Kim ; Kyeongjin Park ; Jaewon Heo ; Hyunduk Kim ; Byoung-wook Kim ; Gyuseong Cho
Author_Institution :
Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
A large area X-ray CMOS image sensor (LXCIS) is a well-known imaging device for high speed and resolution. In design and fabrication process, we found several problems in making LXCIS, especially in signal transferring. A 3-transistor active pixel sensor (3T APS) in LXCIS has a long signal line about 16.896 cm as a worst case. This long signal line consists of metal and it has resistance and capacitance about 21.12 kΩ and 71.87 pF each. We have optimized 3T APSs transistors, applied boosting circuit, and designed a low parasitic resistance and capacitance. From our simulation result, we obtained a high speed operation, which ranges from 13.5 frame per second (FPS) to 18.6 FPS in 1536 × 3072 pixel arrays, and a high dynamic range by increasing maximum voltage of pixel output signal.
Keywords :
CMOS image sensors; computerised tomography; diagnostic radiography; mammography; transistors; 3-transistor active pixel sensor; 3T APS; LXCIS; boosting circuit; capacithigh speed operationance; fast signal transfer; large-area X-ray CMOS image sensors; low parasitic resistance; Boosting; Integrated circuit modeling; Metals; Parasitic capacitance; Resistance; Transistors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829607
