Title :
Evaluation of undoped zinc sulfide crystal scintillator
Author :
Yanagida, T. ; Fujimoto, Yasutaka ; Yanagida, Satoko
Author_Institution :
Kyushu Inst. of Technol., Kitakyushu, Japan
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
Undoped ZnS crystal was evaluated on its scintillation characteristics. In optical transmittance, high transparency of 70% was observed from UV to near infrared wavelengths. In X-ray induced radioluminescence, two intense peaks appeared at 430 and 520 nm. When 241Am was irradiated, its scintillation light yield resulted 500 ph/5.5 MeV-α.
Keywords :
II-VI semiconductors; luminescence; scintillation; transparency; wide band gap semiconductors; zinc compounds; UV wavelength; X-ray induced radioluminescence; ZnS; intense peaks; near infrared wavelength; optical transmittance; scintillation light yield; transparency; undoped zinc sulfide crystal scintillator; wavelength 430 nm; wavelength 520 nm; Biomedical optical imaging; Ceramics; Crystals; Detectors; Indium tin oxide; Optimized production technology; Silicon;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829663
