Title :
Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
Author :
Chen Xu ; Hellweg, Wolf Lukas ; Garutti, Erika ; Klanner, Robert
Author_Institution :
DESY, Hamburg, Germany
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
We have investigated the effects of X-ray radiation of doses of 0, 200 Gy, and 20 kGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050P. From current-voltage, capacitance/conductance-voltage, pulse-shape and pulse-height measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes are observed, however, the changes above the breakdown voltage hardly affect the operation of SiPMs. We conclude that the operation of the Hamamatsu SiPM as high-gain photodetector is hardly affected by X-ray radiation damage in the dose range investigated.
Keywords :
X-ray effects; dosimetry; photodetectors; photomultipliers; silicon radiation detectors; Hamamatsu silicon photomultiplier properties; S10362-11-050C; S10362-11-050P; SiPM characteristics; X-ray irradiation effect; X-ray radiation damage; breakdown voltage; high-gain photodetector; pulse-height measurement; pulse-shape measurement; radiation doses; Capacitance; Current measurement; Electrical resistance measurement; Frequency measurement; Radiation effects; Resistance; Resistors; MPPC; Silicon photomultiplier; X-ray radiation damage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829718
