Title :
Radiation damage effects in Silicon Photo-Multipliers
Author :
Andreotti, Marcus ; Baldini, W. ; Calabrese, R. ; Cibinetto, G. ; Ramusino, A. Cotta ; Dedonato, C. ; Fiorini, Mattia ; Luppi, E. ; Malaguti, R. ; Montanari, Alessandro ; Pietropaolo, Andrea ; Santoro, Vincenzo ; Tellarini, G. ; Tomassetti, L. ; Tosi, Nic
Author_Institution :
Dipt. di Fis. e Sci. della Terra, Univ. di Ferrara, Ferrara, Italy
fDate :
Oct. 27 2013-Nov. 2 2013
Abstract :
In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenti-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium on a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2×109neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, like dark current and charge spectra, has been observed. An extensive comparison of the performances of all the devices will be presented.
Keywords :
neutron beams; photodetectors; photomultipliers; radiation effects; silicon radiation detectors; AdvanSiD; GELINA; Geel Electron LINear Accelerator; charge spectra; dark current; electron volt energy 1 MeV; gradual worsening; integrated dose; photodetector; radiation damage effect; silicon photomultipliers; white neutron beam; Current measurement; Dark current; Neutrons; Performance evaluation; Radiation effects; Silicon; Temperature measurement;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE
Conference_Location :
Seoul
Print_ISBN :
978-1-4799-0533-1
DOI :
10.1109/NSSMIC.2013.6829721
