Analysis of the transient radiation damage effects on electronics using irradiation experiment and model simulation

Author

Lee, N.H. ; Oh, S.C. ; Jeong, S.H. ; Hwang, Y.G. ; Kang, H.S. ; Won, N.K. ; Cho, M.H. ; Lee, M.W.

Author_Institution

Korea Atomic Energy Res. Inst., Daejeon, South Korea

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

3

Abstract

In this study, it was attempted to construct damage assessment model which could systematically analyze and predict the effects on the semiconductor devices. At first, the PIN diode was designed and manufactured for both the simulation and radiation test. After that the radiation test were performed to it with Gamma-ray. Next, after inputting the pulse model similar to that used in the measurement into 3D model PIN diode with the same parameters of the process design, the behavior of the instantaneous charges which were generated inside the devices were analyzed and the output current value was simulated. The results obtained from the two processes showed the similar characteristics.

Keywords

p-i-n diodes; radiation effects; 3D model PIN diode; damage assessment model; irradiation experiment; model simulation; radiation test; semiconductor devices; transient radiation damage effects analysis; Analytical models; Integrated circuit modeling; PIN photodiodes; Radiation effects; Semiconductor device modeling; Solid modeling; Three-dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829837

Filename

6829837