A modified diffusion model for I–V properties of Schottky contacts to high resistivity semiconductors

Author

Ning Wang ; Wanqi Jie ; Lingyan Xu ; Gangqiang Zha ; Yan Zhou ; Yadong Xu ; Tao Wang

Author_Institution

State Key Lab. of Solidification Process., Northwestern Polytech. Univ., Xi´an, China

fYear

2013

fDate

Oct. 27 2013-Nov. 2 2013

Firstpage

1

Lastpage

5

Abstract

This paper presents a model to describe I-V properties of Schottky contacts to high resistivity semiconductors, such as CdTe, CdZnTe, TlBr and so on, when depletion region width is less than the crystal thickness. Effects of non-depletion region on dark current are considered in this model. I-V curves of CdZnTe radiation detectors are fitted quite well with this model. Space charge concentration, barrier height and energy difference between conduction band bottom and Femi Level can also be obtained easily. Furthermore, we use TCAD simulation to explain the fitted parameters.

Keywords

Fermi level; II-VI semiconductors; Schottky barriers; cadmium compounds; conduction bands; dark conductivity; electrical resistivity; semiconductor counters; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; zinc compounds; CdZnTe; Fermi level; I-V properties; Schottky contacts; TCAD simulation; barrier height; conduction band; dark current; depletion region width; energy difference; high resistivity semiconductors; modified diffusion model; nondepletion region; radiation detectors; space charge concentration; Conductivity; Detectors; Mathematical model; Schottky barriers; Semiconductor device modeling; Space charge; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2013 IEEE

Conference_Location

Seoul

Print_ISBN

978-1-4799-0533-1

Type

conf

DOI

10.1109/NSSMIC.2013.6829843

Filename

6829843