Title :
Thick Double-Biased IrMn/NiFe/IrMn Planar Hall Effect Bridge Sensors
Author :
Qejvanaj, Fatjon ; Zubair, Mohammad ; Persson, A. ; Mohseni, S.M. ; Fallahi, V. ; Sani, S.R. ; Chung, Shi-Uk ; Tuan Le ; Magnusson, F. ; Akerman, J.
Author_Institution :
NanOsc AB, Kista, Sweden
Abstract :
In this paper, we present a new material stack for planar Hall effect bridge (PHEB) sensors and a detailed investigation of the sensitivity and noise properties of PHEB sensors made from these. The sputter deposited material stack was based on a ferromagnetic (FM) NiFe sensing layer surrounded by two layers of anti-FM IrMn. This material stack enables implementation of a thick NiFe layer without loss of sensitivity. We present an improvement in detectivity in the PHEB by changing the shape and the materials of the corners between the sensors in a meander shape. A significant reduction of noise also comes from the thick NiFe layer, due to the reduced resistance of the sensor.
Keywords :
Hall effect transducers; ferromagnetic materials; iridium alloys; iron alloys; magnetic sensors; manganese alloys; nickel alloys; sputter deposition; IrMn-NiFe-IrMn; PHEB sensor; ferromagnetic material; ferromagnetic sensing layer; sputter deposited material stack; thick double-biased planar Hall effect bridge sensor; Magnetic sensors; Materials; Noise; Perpendicular magnetic anisotropy; Sensitivity; Anisotropic magnetoresistance (AMR); antiferromagnetic (AFM); ferromagnetic (FM); magnetic anisotropy; magnetic sensor planar Hall effect;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2330846
