DocumentCode :
687876
Title :
Minimal Maximum-Level Programming: Faster memory access via multi-level cell sharing
Author :
Berman, Amit ; Birk, Yitzhak
Author_Institution :
Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
fYear :
2013
fDate :
9-13 Dec. 2013
Firstpage :
2705
Lastpage :
2710
Abstract :
In multi-level-cell (MLC) memory such as Flash and Phase-change memory, shrinking cell size and the growing number of levels per cell worsen the access-rate to capacity ratio and even reduce access rate. We present Minimal Maximum-Level Programming (MMLP), a scheme for expediting cell writing by sharing physical cells among multiple data pages and exploiting the fact that making moderate changes to a cell´s level is faster than making large ones. Reading is also expedited by requiring fewer reference comparisons. In a four-level cell example, we achieve a 32% reduction in write/read latency relative to prior art with negligible area overhead.
Keywords :
flash memories; phase change memories; MMLP; flash memory access; minimal maximum-level programming; multilevel-cell memory access sharing; phase-change memory access; write-read latency; Computer architecture; Decoding; Encoding; Flash memories; Microprocessors; Programming; Writing; Flash Memory; Multi-Level Cell (MLC); Phase-Change Memory; Read/Write Performance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Global Communications Conference (GLOBECOM), 2013 IEEE
Conference_Location :
Atlanta, GA
Type :
conf
DOI :
10.1109/GLOCOM.2013.6831483
Filename :
6831483
Link To Document :
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