• DocumentCode
    687876
  • Title

    Minimal Maximum-Level Programming: Faster memory access via multi-level cell sharing

  • Author

    Berman, Amit ; Birk, Yitzhak

  • Author_Institution
    Electr. Eng. Dept., Technion - Israel Inst. of Technol., Haifa, Israel
  • fYear
    2013
  • fDate
    9-13 Dec. 2013
  • Firstpage
    2705
  • Lastpage
    2710
  • Abstract
    In multi-level-cell (MLC) memory such as Flash and Phase-change memory, shrinking cell size and the growing number of levels per cell worsen the access-rate to capacity ratio and even reduce access rate. We present Minimal Maximum-Level Programming (MMLP), a scheme for expediting cell writing by sharing physical cells among multiple data pages and exploiting the fact that making moderate changes to a cell´s level is faster than making large ones. Reading is also expedited by requiring fewer reference comparisons. In a four-level cell example, we achieve a 32% reduction in write/read latency relative to prior art with negligible area overhead.
  • Keywords
    flash memories; phase change memories; MMLP; flash memory access; minimal maximum-level programming; multilevel-cell memory access sharing; phase-change memory access; write-read latency; Computer architecture; Decoding; Encoding; Flash memories; Microprocessors; Programming; Writing; Flash Memory; Multi-Level Cell (MLC); Phase-Change Memory; Read/Write Performance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Global Communications Conference (GLOBECOM), 2013 IEEE
  • Conference_Location
    Atlanta, GA
  • Type

    conf

  • DOI
    10.1109/GLOCOM.2013.6831483
  • Filename
    6831483