DocumentCode :
688571
Title :
Finding defects in a 22 nm node wafer with visible light
Author :
Renjie Zhou ; Popescu, Gabriel ; Goddard, L.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epiillumination diffraction phase microscopy.
Keywords :
image resolution; light diffraction; lighting; optical images; optical microscopy; photodetectors; visible spectra; diffraction limited lateral resolution; epiillumination diffraction phase microscopy; node wafer defects; quantitative amplitude images; quantitative phase images; size 22 nm; visible light; Diffraction; Image resolution; Microscopy; Noise; Optical diffraction; Optical imaging; Optical microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6832945
Link To Document :
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