Title :
Semipolar faceting for InGaN-based polychromatic LEDs
Author :
Funato, Mitsuru ; Kawakami, Y.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
Abstract :
Toward the next generation solid state lighting, three-dimensional InGaN light emitting diodes (LEDs) are a new trend. Grown through a re-growth technique, they show semipolar faceting, which enables polychromatic and efficient emission.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; wide band gap semiconductors; InGaN; InGaN-based polychromatic LED; light emitting diodes; polychromatic emission; semipolar faceting; solid state lighting; Color; Gallium nitride; Light emitting diodes; Phosphors; Solid state lighting; Three-dimensional displays;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
