Title :
A study of mechanical lift-off technology for high-efficiency vertical LEDs using Micro-Porous GaN template
Author :
Chia-Yu Lee ; Da-Wei Lin ; Che-Yu Liu ; Shih-Chieh Hsu ; Hao-Chung Kuo ; Shing-Chung Wang ; Chun-Yen Chang
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×108 cm-2. The sapphire substrate was easily removed by mechanical lift-off during wafer bonding process. The light output of V-LEDs are greatly enhanced by 100% compared with Conventional-LEDs at an operating current of 20 mA due to the high quality thin GaN and excellent heating dissipation.
Keywords :
dislocation density; etching; gallium compounds; light emitting diodes; porous semiconductors; transmission electron microscopy; wide band gap semiconductors; KOH wet etching; TEM; V-LED; heating dissipation; high-efficiency vertical LED; mechanical lift-off technology; microporous GaN template; sapphire substrate; threading dislocation density; transmission electron microscopy; Educational institutions; Gallium nitride; Gold; Light emitting diodes; Nickel; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
