DocumentCode
688608
Title
Two-photon laser-assisted device alteration in silicon integrated circuits using a 1.28-μm femtosecond Raman-soliton fiber laser
Author
Serrels, K.A. ; Bodoh, D. ; Reid, Derryck T. ; Farrell, C. ; Leslie, N. ; Lundquist, T.R. ; Vedagarbha, P. ; Erington, K.
Author_Institution
DCG Syst. Inc., Fremont, CA, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
By inducing two-photon absorption to perturb the switching characteristics of sensitive transistors located within the active layer of a proprietary 28-nm silicon test chip, we demonstrate time-resolved nonlinear laser-assisted device alteration.
Keywords
Raman lasers; fibre lasers; integrated optics; optical solitons; silicon; two-photon processes; Si; femtosecond Raman-soliton fiber laser; sensitive transistors; silicon integrated circuits; size 28 nm; switching characteristics; time-resolved nonlinear laser-assisted device alteration; two-photon absorption; two-photon laser-assisted device alteration; wavelength 1.28 mum; Fiber lasers; Optical imaging; Optical pulses; Phase locked loops; Semiconductor lasers; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6832982
Link To Document