Title :
Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes
Author :
Hardy, M.T. ; Holder, C.O. ; Nakamura, Shigenari ; Speck, James S. ; Cohen, D.A. ; DenBaars, Steven P.
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
Non-epitaxial cladding layers have advantages for green laser diodes in terms of reduced p-cladding resistance and reduced active region thermal damage. We demonstrate true green semipolar InGaN/GaN laser diodes with ITO cladding grown on semipolar GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; tin compounds; GaN; ITO-InGaN-GaN; nonepitaxial cladding layers; p-cladding resistance; reduced active region thermal damage; semipolar GaN substrates; true green ITO clad semipolar (202̅1) InGaN/GaN laser diodes; Diode lasers; Gallium nitride; Green products; Indexes; Indium tin oxide; Optical waveguides; Resistance;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
