DocumentCode
688658
Title
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
Author
Redaelli, L. ; Wenzel, Hans ; Weig, T. ; Lukens, G. ; Einfeldt, S. ; Schwarz, U.T. ; Kneissl, M. ; Trankle, Gunther
Author_Institution
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.
Keywords
III-V semiconductors; gallium compounds; ridge waveguides; semiconductor lasers; waveguide lasers; wide band gap semiconductors; GaN; blue laser diodes; index antiguiding; narrow ridge-waveguide laser diodes; ridge etch depth; threshold current density; violet laser diodes; Current measurement; Diode lasers; Refractive index; Semiconductor lasers; Threshold current; Waveguide lasers; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833033
Link To Document