Title :
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
Author :
Redaelli, L. ; Wenzel, Hans ; Weig, T. ; Lukens, G. ; Einfeldt, S. ; Schwarz, U.T. ; Kneissl, M. ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.
Keywords :
III-V semiconductors; gallium compounds; ridge waveguides; semiconductor lasers; waveguide lasers; wide band gap semiconductors; GaN; blue laser diodes; index antiguiding; narrow ridge-waveguide laser diodes; ridge etch depth; threshold current density; violet laser diodes; Current measurement; Diode lasers; Refractive index; Semiconductor lasers; Threshold current; Waveguide lasers; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
