Title :
InAs quantum dot growth using bismuth as a surfactant for optoelectronic applications
Author :
Dasika, Vaishno D. ; Krivoy, E.M. ; Nair, H.P. ; Maddox, Scott J. ; Park, K.W. ; Jung, D. ; Lee, Minjoo Larry ; Yu, E.T. ; Bank, Seth R.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
We report the use of a bismuth surfactant to increase self-assembled InAs quantum dot emission intensity, decrease the linewidth, and extend the emission wavelength with increasing InAs deposition, without the concomitant loss of dot density.
Keywords :
III-V semiconductors; bismuth; indium compounds; molecular beam epitaxial growth; optical losses; optical materials; self-assembly; semiconductor quantum dots; spectral line breadth; surfactants; Bi; InAs; InAs deposition; InAs quantum dot growth; bismuth surfactant; dot density concomitant loss; emission wavelength; optoelectronic applications; self-assembled InAs quantum dot emission intensity; spectral linewidth; Bismuth; Educational institutions; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dots;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
