Title :
GaN-based dual color LEDs with P-type insertion layer for balancing two-color intensities
Author :
Kai-Lun Chi ; Shu-ting Yeh ; Yu-Hsiang Yeh ; Kun-Yan Lin ; Jin-Wei Shi ; Yuh-Renn Wu ; Sheu, J.-K.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
Abstract :
By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (<; 45 A/cm2).
Keywords :
III-V semiconductors; current density; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN-based dual color LED; active region; carrier distribution; driving-current density; output intensity; p-type insertion layer; quantum wells; two-color intensity; Current density; Gallium nitride; Light emitting diodes; Photonics; Power generation; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
