DocumentCode
688682
Title
GaN-based dual color LEDs with P-type insertion layer for balancing two-color intensities
Author
Kai-Lun Chi ; Shu-ting Yeh ; Yu-Hsiang Yeh ; Kun-Yan Lin ; Jin-Wei Shi ; Yuh-Renn Wu ; Sheu, J.-K.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan, Taiwan
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
By inserting p-type layers into active regions of dual-color GaN LEDs to uniform carrier distribution, the output intensities from quantum-wells near n- and p-sides can be balanced under a low driving-current density (<; 45 A/cm2).
Keywords
III-V semiconductors; current density; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN-based dual color LED; active region; carrier distribution; driving-current density; output intensity; p-type insertion layer; quantum wells; two-color intensity; Current density; Gallium nitride; Light emitting diodes; Photonics; Power generation; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833057
Link To Document