Title :
Effects of strain relaxation on luminescent properties of InGaN/GaN nanorods from 2D to 0D transition
Author :
Chu-Hsiang Teng ; Lei Zhang ; Hill, Tyler ; Demory, Brandon ; Hui Deng ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
We characterized luminescent properties of InGaN nanodisks in both quantum well and dot regimes. The luminescent efficiency increases as strain is relaxed in the quantum well but peaks at the transition from well to dot.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanophotonics; nanorods; optical materials; photoluminescence; piezo-optical effects; semiconductor quantum dots; semiconductor quantum wells; 2D to 0D transition; InGaN nanodisks; InGaN-GaN; InGaN/GaN nanorods; luminescent efficiency; luminescent properties; quantum dot; quantum well; strain relaxation; Excitons; Gallium nitride; Laser excitation; Light emitting diodes; Measurement by laser beam; Quantum dot lasers; Strain;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
