DocumentCode
688683
Title
Effects of strain relaxation on luminescent properties of InGaN/GaN nanorods from 2D to 0D transition
Author
Chu-Hsiang Teng ; Lei Zhang ; Hill, Tyler ; Demory, Brandon ; Hui Deng ; Ku, P.C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We characterized luminescent properties of InGaN nanodisks in both quantum well and dot regimes. The luminescent efficiency increases as strain is relaxed in the quantum well but peaks at the transition from well to dot.
Keywords
III-V semiconductors; gallium compounds; indium compounds; nanophotonics; nanorods; optical materials; photoluminescence; piezo-optical effects; semiconductor quantum dots; semiconductor quantum wells; 2D to 0D transition; InGaN nanodisks; InGaN-GaN; InGaN/GaN nanorods; luminescent efficiency; luminescent properties; quantum dot; quantum well; strain relaxation; Excitons; Gallium nitride; Laser excitation; Light emitting diodes; Measurement by laser beam; Quantum dot lasers; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833058
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