DocumentCode
688780
Title
All-semiconductor plasmonic perfect absorber
Author
Law, S. ; Roberts, Clive ; Kilpatrick, Torin ; Yu, Long ; Ribaudo, Troy ; Shaner, E.A. ; Podolskiy, Viktor ; Wasserman, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Urbana, IL, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.
Keywords
geometrical optics; infrared spectra; light absorption; nanofabrication; nanophotonics; optical fabrication; plasmonics; semiconductor devices; absorption resonance; all-semiconductor plasmonic perfect absorber; highly-doped semiconductors; lateral geometry; midinfrared perfect absorber fabrication; Absorption; Films; Finite difference methods; Metals; Plasmons; Reflection; Time-domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833155
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