DocumentCode :
688780
Title :
All-semiconductor plasmonic perfect absorber
Author :
Law, S. ; Roberts, Clive ; Kilpatrick, Torin ; Yu, Long ; Ribaudo, Troy ; Shaner, E.A. ; Podolskiy, Viktor ; Wasserman, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois Urbana Champaign, Urbana, IL, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a mid-infrared perfect absorber fabricated only from highly-doped semiconductors. A strong (>98%) absorption resonance is observed which is effectively independent of lateral geometry, but highly dependent on the vertical profile.
Keywords :
geometrical optics; infrared spectra; light absorption; nanofabrication; nanophotonics; optical fabrication; plasmonics; semiconductor devices; absorption resonance; all-semiconductor plasmonic perfect absorber; highly-doped semiconductors; lateral geometry; midinfrared perfect absorber fabrication; Absorption; Films; Finite difference methods; Metals; Plasmons; Reflection; Time-domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833155
Link To Document :
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