Title :
3 μm GaSb-based type-i quantum-well diode lasers with cascade pumping scheme
Author :
Rui Liang ; Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Abstract :
GaSb-based type-I quantum-well diode lasers with two-cascade active region were designed and fabricated. The injection is achieved by means of tunnel junction between AlGaAsSb graded composition and InAs/AlSb chirped superlattice layers. The devices operate in continuous wave regime at room temperature and demonstrate twofold improvement of injection efficiency as compared to reference single cascade lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; optical pumping; quantum cascade lasers; superlattices; AlGaAsSb; AlGaAsSb graded composition; GaSb; GaSb-based type-I quantum-well diode lasers; InAs-AlSb; InAs/AlSb chirped superlattice layers; cascade pumping scheme; continuous wave regime; injection efficiency; reference single cascade lasers; room temperature; temperature 293 K to 298 K; tunnel junction; two-cascade active region; twofold improvement; wavelength 3 mum; Diode lasers; Gas lasers; Laser excitation; Optical pulses; Optical superlattices; Quantum cascade lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
