DocumentCode
688832
Title
Defect-state-absorption photocurrent in PN-diode-integrated silicon microring resonators
Author
Yu Li ; Poon, Andrew W.
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We report defect-state-absorption photocurrent in PN-diode-integrated silicon microrings at 1550 nm. We demonstrate a cavity-enhanced responsivity of 3.1 mA/W upon 0 V, and 173 mA/W upon -10 V with a 3dB bandwidth of 10 GHz.
Keywords
crystal defects; elemental semiconductors; integrated optics; light absorption; micro-optics; microcavities; optical resonators; photodetectors; semiconductor diodes; silicon; PN-diode-integrated silicon microring resonators; Si; bandwidth 10 GHz; cavity-enhanced responsivity; defect-state-absorption photocurrent; gain 3 dB; voltage -10 V; voltage 0 V; wavelength 1550 nm; Current measurement; Optical resonators; Optical variables measurement; Optical waveguides; Photoconductivity; Silicon; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833208
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