DocumentCode
688901
Title
Indirect lift-off of thin dielectric layers from silicon by femtosecond laser ‘cold’ ablation at the interface
Author
Rublack, T. ; Muchow, M. ; Hartnauer, S. ; Seifert, Gerhard
Author_Institution
Zentrum fur Innovationskompetenz SiLi-nano®, Martin-Luther-Univ. Halle-Wittenberg, Halle, Germany
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
Thin dielectric layers have been removed from silicon substrates using femtosecond laser pulses via evaporation of few nanometers Si at the interface. Slightly above threshold, this non-thermal ablation process leaves the opened area structurally undamaged.
Keywords
laser ablation; silicon; Si; Si evaporation; femtosecond laser pulses; indirect lift-off; interface femtosecond laser cold ablation; nonthermal ablation process; opened area; silicon substrates; thin dielectric layers; Absorption; Dielectrics; Laser ablation; Semiconductor lasers; Silicon; Substrates; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833279
Link To Document