DocumentCode :
688960
Title :
III-As pillar arrays by metal-assisted chemical etching for photonic applications
Author :
Mohseni, Parsian K. ; Lei Pan ; Xiang Zhao ; Seung Hyun Kim ; Balasundaram, K. ; Jeong Dong Kim ; Coleman, J.J. ; Xiuling Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Ordered arrays of GaAs/InGaAs micro and nanopillars are formed by metal-assisted chemical etching (MacEtch). The dependence of morphology and etch rate upon temperature, etchant composition, and doping concentration are explored and optical characteristics are discussed.
Keywords :
III-V semiconductors; doping; etching; gallium arsenide; indium compounds; micro-optics; nanophotonics; optical arrays; optical fabrication; optical materials; GaAs-InGaAs; GaAs/InGaAs micropillars; GaAs/InGaAs nanopillars; III-As pillar array; MacEtch; doping concentration; etch rate; etchant composition; metal-assisted chemical etching; morphology dependence; optical characteristics; ordered arrays; photonic applications; temperature; Chemicals; Doping; Etching; Gallium arsenide; Indium gallium arsenide; Light emitting diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833340
Link To Document :
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