Title :
III-V compound semiconductor nanowire solar cells
Author :
Fukui, T. ; Yoshimura, Masashi ; Nakai, Eiji ; Tomioka, Katsuhiro
Author_Institution :
Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
Core-multi-shell InP/AlInP nanowire-array solar cells were fabricated using catalyst-free selective-area metal-organic vapor phase epitaxy. The wider-bandgap outer shell layer passivates InP nanowires effectively, increasing the short-circuit current density and conversion efficiency to 6.35% under AM1.5G.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; current density; indium compounds; nanofabrication; nanowires; passivation; semiconductor growth; solar cells; vapour phase epitaxial growth; III-V compound semiconductor nanowire solar cells; InP-AlInP; catalyst-free selective-area metal-organic vapor phase epitaxy; conversion efficiency; core-multishell InP-AlInP nanowire-array solar cells; passivation; short-circuit current density; Arrays; Epitaxial growth; Indium phosphide; Photovoltaic cells; Radiative recombination; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
