• DocumentCode
    688975
  • Title

    III-V compound semiconductor nanowire solar cells

  • Author

    Fukui, T. ; Yoshimura, Masashi ; Nakai, Eiji ; Tomioka, Katsuhiro

  • Author_Institution
    Res. Center for Integrated Quantum Electron., Hokkaido Univ., Sapporo, Japan
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Core-multi-shell InP/AlInP nanowire-array solar cells were fabricated using catalyst-free selective-area metal-organic vapor phase epitaxy. The wider-bandgap outer shell layer passivates InP nanowires effectively, increasing the short-circuit current density and conversion efficiency to 6.35% under AM1.5G.
  • Keywords
    III-V semiconductors; MOCVD; aluminium compounds; current density; indium compounds; nanofabrication; nanowires; passivation; semiconductor growth; solar cells; vapour phase epitaxial growth; III-V compound semiconductor nanowire solar cells; InP-AlInP; catalyst-free selective-area metal-organic vapor phase epitaxy; conversion efficiency; core-multishell InP-AlInP nanowire-array solar cells; passivation; short-circuit current density; Arrays; Epitaxial growth; Indium phosphide; Photovoltaic cells; Radiative recombination; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=688975