DocumentCode :
689057
Title :
Investigation of CuZn point defect on the photovaltaic performance of the RF-sputtered Cu2ZnSnSe4-based thin film solar cell
Author :
Shou-Yi Kuo ; Dan-Hua Hsieh ; Jui-Fu Yang ; Fang-I Lai ; Hao-Chung Kuo
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
A 4.4 % RF-sputtered Cu2ZnSnSe4 thin film solar cell was studied by transmittance electron microscopy (TEM) and photoluminescence (PL). The result reveals non-uniform elemental distribution and large potential fluctuation mainly induced by CuZn defect.
Keywords :
copper compounds; photoluminescence; point defects; solar cells; sputter deposition; tin compounds; transmission electron microscopy; zinc compounds; Cu2ZnSnSe4; CuZn point defect; PL; RF-sputtered thin film solar cell; TEM; large potential fluctuation; nonuniform elemental distribution; photoluminescence; photovoltaic performance; transmittance electron microscopy; Educational institutions; Fluctuations; Materials; Photoluminescence; Photonic band gap; Photonics; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833438
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=689057
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