• DocumentCode
    689057
  • Title

    Investigation of CuZn point defect on the photovaltaic performance of the RF-sputtered Cu2ZnSnSe4-based thin film solar cell

  • Author

    Shou-Yi Kuo ; Dan-Hua Hsieh ; Jui-Fu Yang ; Fang-I Lai ; Hao-Chung Kuo

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2013
  • fDate
    9-14 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A 4.4 % RF-sputtered Cu2ZnSnSe4 thin film solar cell was studied by transmittance electron microscopy (TEM) and photoluminescence (PL). The result reveals non-uniform elemental distribution and large potential fluctuation mainly induced by CuZn defect.
  • Keywords
    copper compounds; photoluminescence; point defects; solar cells; sputter deposition; tin compounds; transmission electron microscopy; zinc compounds; Cu2ZnSnSe4; CuZn point defect; PL; RF-sputtered thin film solar cell; TEM; large potential fluctuation; nonuniform elemental distribution; photoluminescence; photovoltaic performance; transmittance electron microscopy; Educational institutions; Fluctuations; Materials; Photoluminescence; Photonic band gap; Photonics; Photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2013 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6833438