Title :
Characterization of APD-PIN photodiodes using InAs/InAlGaAs quantum-dot absorption layer
Author :
Umezawa, Toshimasa ; Akahane, Kouichi ; Kanno, Atsushi ; Kawanishi, Tetsuyas
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
Abstract :
We found avalanche multiplications in InAs/InAlGaAs quantum-dot PIN photodiodes, and characterized the temperature dependence of I-V curves, the multiplication factors and the RF responses.
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; electrical conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; semiconductor quantum dots; APD-PIN photodiodes; I-V curves; InAs-InAlGaAs; RF responses; avalanche multiplication factor; quantum-dot PIN photodiodes; quantum-dot absorption layer; temperature dependence; Absorption; Avalanche photodiodes; Dark current; PIN photodiodes; Photonic band gap; Quantum dots; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
