DocumentCode :
689271
Title :
Electro-mechanical detection of near infrared optical intensity modulation in silicon
Author :
Tallur, Siddharth ; Bhave, Sunil A.
Author_Institution :
OxideMEMS Lab., Cornell Univ., Ithaca, NY, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
We report chip-scale electro-mechanical detection of near-IR optical intensity modulation at 174.2MHz and 1.198GHz in silicon. This constitutes the first experimental demonstration of a photon to phonon translator in a CMOS compatible platform.
Keywords :
electro-optical modulation; intensity modulation; micro-optomechanical devices; optical modulation; silicon; CMOS compatible platform; chip-scale electro-mechanical detection; frequency 1.198 GHz; frequency 174.2 MHz; near infrared optical intensity modulation; near-IR optical intensity modulation; photon-to-phonon translator; Detectors; Optical modulation; Optical resonators; Optical sensors; Optical waveguides; Silicon; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833654
Link To Document :
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