Title :
Self-mode-locked vertical external-cavity surface-emitting laser (VECSEL)
Author :
Albrecht, Alexander R. ; Seletskiy, D.V. ; Cederberg, Jeffrey G. ; Sheik-Bahae, Mansoor
Author_Institution :
Phys. & Astron. Dept., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
Self-mode-locking has been observed in an InGaAs VECSEL at 1030 nm with sub-500 fs pulses at 1 GHz. The mechanism is attributed to negative ultrafast Kerr lensing in the gain structure.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; laser mode locking; optical Kerr effect; surface emitting lasers; InGaAs; frequency 1 GHz; indium gallium arsenide VECSEL; negative ultrafast Kerr lensing; self-mode-locked vertical external-cavity surface-emitting laser; subfemtosecond pulses; time 500 fs; wavelength 1030 nm; Apertures; Cavity resonators; Laser excitation; Pump lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
