Title :
Strain-engineered SiGe quantum-well nanomembranes for far-infrared intersubband device applications
Author :
Sudradjat, F.F. ; Sookchoo, P. ; Durmaz, H. ; Kiefer, A.M. ; Lagally, M.G. ; Paiella, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
Abstract :
SiGe/Si quantum-well nanomembranes, where stress due to lattice mismatch is relaxed via elastic strain sharing rather than defect formation, are developed and their potential for far-infrared intersubband device applications is demonstrated.
Keywords :
Ge-Si alloys; elemental semiconductors; internal stresses; membranes; nanostructured materials; semiconductor materials; semiconductor quantum wells; silicon; SiGe-Si; elastic strain sharing; far-infrared intersubband device applications; lattice mismatch; strain-engineered quantum-well nanomembranes; stress; Absorption; Lattices; Silicon; Silicon germanium; Strain; Substrates; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
