DocumentCode
689332
Title
Polarization properties of GaN nanowire lasers
Author
Hurtado, A. ; Xu, Hao ; Wright, J.B. ; Sheng Liu ; Li, Qifeng ; Wang, George T. ; Luk, Ting S. ; Figiel, Jeffery J. ; Cross, Karissa ; Balakrishnan, Ganesh ; Lester, L.F. ; Brener, Igal
Author_Institution
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
The polarization properties of GaN nanowire lasers are studied experimentally by analyzing their end-facet emission. We demonstrate that the polarization state varies for different transverse modes. Linear and elliptical polarizations are observed in our measurements.
Keywords
III-V semiconductors; gallium compounds; laser modes; laser variables measurement; light polarisation; nanophotonics; nanowires; semiconductor lasers; semiconductor quantum wires; GaN; elliptical polarization properties; end-facet emission analysis; gallium nitride nanowire lasers; linear polarization properties; transverse modes; Gallium nitride; Laser modes; Measurement by laser beam; Optical imaging; Optical polarization; Semiconductor lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833715
Link To Document