DocumentCode :
689335
Title :
Room temperature polariton lasing from GaN nanowire array in a dielectric microcavity
Author :
Bo Xiao ; Junseok Heo ; Jahangir, Shafat ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Polariton lasing from epitaxially grown GaN nanowire array embedded in a dielectric microcavity is demonstrated at room temperature under optical excitation. Simulations of cavity mode and polariton emission characteristics of the device are presented.
Keywords :
III-V semiconductors; epitaxial growth; gallium compounds; laser beams; laser modes; microcavity lasers; nanophotonics; nanowires; polaritons; semiconductor laser arrays; GeN; device cavity mode; device polariton emission characteristics; dielectric microcavity; epitaxially grown GaN nanowire array; optical excitation; room temperature polariton lasing; temperature 293 K to 298 K; Arrays; Cavity resonators; Dielectrics; Excitons; Gallium nitride; Lasers; Microcavities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6833718
Link To Document :
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