Title :
GaAs electrically injected exciton-polariton laser
Author :
Bo Xiao ; Das, Aruneema ; Bhowmick, Sourav S. ; Junseok Heo ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Electrically injected polariton lasing from a GaAs-based modulation-doped microcavity diode has been demonstrated under an applied magnetic field of 7 Tesla at 30 K. Polariton lasing and condensation characteristics have been measured and analyzed.
Keywords :
condensation; excitons; gallium arsenide; microcavity lasers; optical modulation; polaritons; semiconductor lasers; GaAs; applied magnetic field; condensation characteristics; electrically injected exciton-polariton laser; magnetic flux density 7 T; modulation-doped microcavity diode; temperature 30 K; Couplings; Current density; Gallium arsenide; Laser excitation; Magnetic field measurement; Microcavities;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
