Title :
A Signal- and Transient-Current Boosting Amplifier for Large Capacitive Load Applications
Author :
Kai Ho Mak ; Ka Nang Leung
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong, China
Abstract :
A signal- and transient-current boosting (STCB) circuit is proposed and applied to a single-stage amplifier driving large capacitive loads. The proposed STCB circuit provides gain-bandwidth product (GBW) extension, slew-rate (SR) improvement and gain enhancement to the amplifier, with only slight alterations to the frequency response and transient response of the single-stage amplifier driving large capacitive loads. No on-chip capacitor or resistor is required. The STCB amplifier is fabricated in a commercial 0.18-μm CMOS technology. The active chip area is 0.00705 mm2. The supply is 1.8 V, and the current consumption is 20.3 μA. The capacitive load (CO) ranges from about 4.4 nF to 19 nF. The measured results with a ~ 19-nF load show the small-signal figure-of-merit (FOMS=GBW·CO/power) and the large-signal figure-of-merit (FOML=SR·CO/power) are 150345 MHz · pF/mW and 31213 V/μs·pF/mW, respectively, which correspond to improvements of 1.52 times and 1.36 times, respectively, to the prior art. The achieved phase margin and gain margin are 80.8 ° and 36.3 dB, respectively.
Keywords :
CMOS analogue integrated circuits; amplifiers; integrated circuit manufacture; CMOS technology; capacitive loads; current 20.3 muA; frequency response; large-signal figure-of-merit; on-chip capacitor; on-chip resistor; signal-current boosting amplifier; single-stage amplifier; size 0.18 mum; small-signal figure-of-merit; transient response; transient-current boosting amplifier; voltage 1.8 V; Bandwidth; Boosting; Capacitors; Impedance; Resistance; Transient analysis; Transistors; Amplifier; frequency response; signal-current boosting; slew rate and transient-current boosting;
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2014.2333364