Title :
Recent progress in development orientation-patterned GaP for next-generation frequency conversion devices
Author :
Tassev, Vladimir ; Snure, Michael ; Peterson, Ronald ; Schepler, K. ; Bedford, R. ; Mann, M. ; Vangala, Shivashankar ; Goodhue, W. ; Lin, Alexander ; Harris, J. ; Fejer, M. ; Schunemann, P.
Author_Institution :
Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA
Abstract :
Progress in developing a cost effective technique for fabrication of orientation patterned GaP templates and a reliable technology for thick epitaxial growth on them is described. First 350 μm thick device quality OPGaP is produced.
Keywords :
III-V semiconductors; gallium compounds; optical fabrication; optical frequency conversion; optical materials; vapour phase epitaxial growth; GaP; OPGaP; cost effective technique; next-generation frequency conversion devices; orientation-patterned GaP fabrication; size 350 mum; thick epitaxial growth; Absorption; Frequency conversion; Materials; Optical device fabrication; Optical mixing;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
