DocumentCode
689440
Title
760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation
Author
Wang, H.L. ; Kong, Lingfu ; Bajek, D. ; Haggett, S. ; Wang, Xia L. ; Cui, B.F. ; Pan, J.Q. ; Ding, Yi ; Cataluna, M.A.
Author_Institution
Inst. of Semicond., Beijing, China
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
We report a novel semiconductor passively mode-locked edge-emitting laser based on a multi-quantum-well structure, emitting at 766 nm and enabling the generation of a stable 19.4-GHz pulse train with a pulse duration of ~5 ps.
Keywords
laser mode locking; laser stability; optical pulse generation; quantum well lasers; frequency 19.4 GHz; multiquantum-well structure; picosecond pulse generation; pulse duration; semiconductor passively mode-locked edge-emitting laser; semiconductor passively mode-locked monolithic Laser; stable pulse train generation; wavelength 760 nm; wavelength 766 nm; Integrated optics; Laser mode locking; Nonlinear optics; Optical fibers; Optical pulses; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833824
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