Title :
Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate
Author :
Gomi, Tomohiro ; Tomizawa, Syuhei ; Ohashi, Kazumi ; Itoh, Kohei M. ; Ishi-Hayase, Junko ; Watanabe, Hiromi ; Umezawa, Hitoshi ; Shikata, Shin-Ichi
Author_Institution :
Dept. of Appl. Physic, Keio Univ., Yokohama, Japan
Abstract :
We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopically-enriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
Keywords :
chemical vapour deposition; diamond; doping; etching; nitrogen; vacancies (crystal); C:N; NV centers; diamond substrate surface; doping position control; etched area; lateral position control; micropatterned substrate; nitrogen-doped isotopically-enriched chemical vapor deposition; nitrogen-vacancy centers; nitrogen-vacancy creation efficiency; spatially-selective doping; Chemical vapor deposition; Diamonds; Doping; Nitrogen; Position control; Substrates; Surface treatment;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
