Title :
Anisotropic structure induced electrical properties of a-plane InN
Author :
Chang, Pin-Hsin ; Chia, J.-W. ; Gwo, S. ; Ahn, Hyo-Sung
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Terahertz spectroscopy reveals that the anisotropic electrical properties of nonpolar InN film along in-plane c-axis and in-plane m-axis are determined by the orientation of narrow and thin stacking faults, not by the density of defects.
Keywords :
III-V semiconductors; anisotropic media; indium compounds; semiconductor thin films; terahertz spectroscopy; InN; anisotropic structure induced electrical properties; nonpolar indium nitride film; terahertz spectroscopy; Anisotropic magnetoresistance; Films; Scattering; Spectroscopy; Stacking; Surface morphology; X-ray scattering;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
